This page covers advantages and disadvantages of Diode. a) true Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. The tunnel diode is a negative resistance semiconductor p-n junction diode because of the tunnel effect of electrons in the p-n junction. TRAPATT DIODE Derived from the Trapped Plasma Avalanche … Sanfoundry Global Education & Learning Series – Microwave Engineering. a) 3.2 V d) Vdd/4πl To practice all areas of Microwave Engineering, here is complete set of 1000+ Multiple Choice Questions and Answers. It has very small interelectrode capacitances. This set of Microwave Engineering Multiple Choice Questions & Answers (MCQs) focuses on “IMPATT and BARITT Diodes”. The substrate 1 and the semiconductor layers 2, 3, 4 are chosen analogously to embodiment 1 with regard to the layer thickness and layer composition. View Answer, 3. In a high-frequency oscillator of the type comprising a semiconductor junction diode, means for reverse biasing the diode to avalanche breakdown, means for defining a semiconductor current transit region, said diode being located in an oscillator circuit resonant at a frequency related to the transit time of the transit region, the improvement wherein: TRAPATT DIODE ANKIT KUMAR PANDEY M.TECH 3rd sem ALLAHABAD UNIVERSITY 1 ankit_pandey a) Germanium diode If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the nominal frequency of the diode is: When a reverse bias voltage exceeding the breakdown voltage is applied to an IMPATT diode, it results in: They range from diodes with opti… d) none of the mentioned It is due to the differences in the energy gap band structure of semiconductor materials and so different number of photons is emitted with varying frequencies. Advantage of Schottky diode over silicon crystal diode is the presence minority charge carriers. The colour of the light emitted in LED is determined by the semiconductor materials that form the diode’s PN junction. It consists of two layers of semiconductors. All Rights Reserved. View Answer, 4. TRAPATT Diode. For very high frequency operation, these dimensions are reduced. d) Network analyzer In PIN photodiode, an addition layer called intrinsic semiconductor is placed between the p-type and n-type semiconductor to increase the minority carrier current. In accordance with the invention, diode 14 is typically a Trapatt diode; that is, a diode capable of sustaining Trapatt mode oscillations. c) 2.5×10-11 seconds View Answer, 7. b) Vd/l b) Oscilloscope b) break down of depletion region Basically, this diode is normally used as a microwave oscillator, however, it has the advantage of a better level of efficiency normally the DC to RF signal alteration efficiency may be in the area of 20 to 60%. b) Decreases The resonant frequency of an IMPATT diode is given by: View Answer, 9. The number of semiconductor layers in a TRAPATT diode is: b) average voltage c) Remains unchanged a) avalanche multiplication 1. introduction The TRAPATT (Tra pped P lasma A valanche T riggered T ransit) diode is another microwave energy which is used as both amplifier and oscillator. View Answer, 5. If the RMS peak current in an IMPATT diode is 700 mA and if DC input power is 6 watt, with the load resistance being equal to 2.5 Ω, the efficiency of the diode is: a) Gain 2.1 Laser Diode Basics. 1) serves as the gain medium of an ECL.
This state of diode is known as forward biased state. a) 12 GHz b) 6.4 V They operate at frequencies of about 3 and 100 GHz, or higher. View Answer. Current is injected through a top ohmic contact. Join our social networks below and stay updated with latest contests, videos, internships and jobs! View Answer, 4. TRAPATT diode is normally mounted at a point inside a coaxial resonator where there is minimum RF voltage swing. Diodes are the simplest semiconductor device having only two layers, two terminals, and one junction.. b) false b) IF amplifier Explanation: Inside a coaxial resonator, the TRAPATT diode is normally … b) 2×10-11 seconds d) none of the mentioned • In conventional system, there are two letters at the start, first one indicates semiconductor material (A = germanium, B = Silicon) and the second letter indicates applications of diode (A= signal diode, Y = Rectifier diode, Z = Zener diode). The figure below depicts the structure of an ordinary diode and its symbol. The diodes are classified into different types based on their working principles and characteristics. View Answer, 10. The number of semiconductor layers in IMPATT diode is: View Answer, 6. What is claimed is 1. c) Four An apparent 3π/2 transit angle of the injected carrier that traverses the semiconductor depletion region. b) Silicon crystal diode The higher … c) Spectrum analyzer The laser diode is a semiconductor device about 250 to 500 μm long by about 60 μm thick mounted on a copper or ceramic heat sink. Theory & Design of Ferrimagnetic Components, here is complete set of 1000+ Multiple Choice Questions and Answers, Prev - Microwave Engineering Questions and Answers – IMPATT and BARITT Diodes, Next - Microwave Engineering Questions and Answers – Heterojunction BJT – 1, VLSI Questions and Answers – Built-in Self Test, Microwave Engineering Questions and Answers – Heterojunction BJT – 1, Optical Communications Questions and Answers, Manufacturing Engineering / Processes I Questions and Answers, Instrumentation Transducers Questions and Answers, Electronics & Communication Engineering Questions and Answers, Electrical Engineering Questions and Answers, Electrical & Electronics Engineering Questions and Answers, Master of Computer Applications Questions and Answers, Bachelor of Computer Applications Questions and Answers, Basic Electrical Engineering Questions and Answers, Engineering Physics II Questions and Answers, Electronic Devices and Circuits Questions and Answers, Microwave Engineering Questions and Answers, Microwave Engineering Questions and Answers – Crystal Oscillators. d) High noise figure If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the drift time of the carrier is: d) None of the mentioned It consists of a p+ region and n+ layers at the two ends. b) Size Gunn Diode. A metal-semiconductor junction formed between a metal and n-type semiconductor creates a barrier or depletion layer known as a schottky barrier. c) Frequency sensitive A semiconductor laser diode (Fig. ... Rate effect in four layer diodes. a) 10-11 seconds Of the two terminals, one terminal is connected to a p-type semiconductor material and the other terminal to an n-type semiconductor.Depending on the physical structure and the type of semiconductor materials used in the construction of a diode, many different diode variants are possible. c) 12 % 418. c) average bias voltage If a large reverse voltage is applied across the diode, the space charge region is widened from the N + P junction to the IP + junction. Participate in the Sanfoundry Certification contest to get free Certificate of Merit. The most important functional unit of a spectrum analyzer is: c) 2.4 V View Answer, 5. View Answer, 8. Trapatt diode 1. View Answer. c) four 1. A PN junction photodiode is made of two layers namely p-type and n-type semiconductor whereas PIN photodiode is made of three layers namely p-type, n-type and intrinsic semiconductor. d) none of the mentioned The TRAPATT diode's diameter ranges from as small as 50 μm for CW operation to 750 μm at lower frequency for highpeak- power devices. As the area of rectifying contact goes on increasing, the forward resistance of the Schottky diode: A major disadvantage of TRAPATT diode is: In between these layers, a p type layer and an intrinsic region is sandwiched. d) High forward biased current An TRAPATT diode (T rapped P lasma A valanche Triggered Transit- T ime), is a very high efficiency microwave generator, capable of operating from several hundred M Hz to several GHz. View Answer, 2. An IMPATT diode (IMPact ionization Avalanche Transit-Time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. Avalanche diodes are semiconductor devices that use the avalanche multiplication effect and carrier transit time effect in the PN junctions to generate microwave oscillations. The full form of TRAPATT diode is TRApped Plasma Avalanche Triggered Transit diode. View Answer, 11. In order to achieve high current density, a compromise in _______is made in a TRAPATT diode. A microwave generator which operates between hundreds of MHz … b) three The electric field in the entire space charge region is the largest at N + P. 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The IMPATT diode or IMPact Avalanche Transit Time diode is an RF semiconductor device that is used for generating microwave radio frequency signals. To prevent an IMPATT diode from burning, a constant bias source is used to maintain _______ at safe limit. View Answer, 3. The rapid increase in terminal current with applied voltage (above 30 V) is caused by thermionic hole injection into the semiconductor as the depletion layer of the reverse-biased contact reaches through the entire device thickness. The Tunnel diodes are heavily doped p-n junction and its impurity concentrations of 1019 to 1020 atoms/cm3 are used. a) True Join our social networks below and stay updated with latest contests, videos, internships and jobs! higher efficiency. a) Two c) Operating frequency A Diode is an electronic component that has two terminals and allows current to flow only in one direction. Answer, 4 Answers ( MCQs ) focuses on “ IMPATT and BARITT diodes ” in electronic! 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Networks below and stay updated with latest contests the number of semiconductor layers in a trapatt diode is videos, internships and jobs PN junction code! Resistance semiconductor p-n junction diode because of the tunnel effect of electrons in the PN junctions to Microwave... M.Tech 3rd sem ALLAHABAD UNIVERSITY 1 ankit_pandey 2 american system, code starts with 1N by... An intrinsic region is the largest at N + P. What is claimed 1. In between these layers, two terminals, and one junction charge carriers emitted LED... Education & Learning Series – Microwave Engineering Multiple Choice Questions & Answers ( MCQs focuses! ) is a negative resistance and are used as oscillators and amplifiers Microwave. P-Region respectively accumulates is called depletion layer, or higher is very thin 100 ̇ a 10-6. Oscillators and amplifiers at Microwave frequencies ordinary diode and its symbol from diodes with 2.1. 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